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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220F package Complement to type 2SB1226 High DC current gain. Large current capacity and wide ASO. DARLINGTON APPLICATIONS Motor drivers,printer hammer drivers,relay drivers,voltage regulator control. PINNING PIN 1 2 3 Base Collector DESCRIPTION 2SD1828 Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 110 Collector-base voltage Open emitter Collector-emitter voltage Open base 100 6 Emitter-base voltage Open collector Collector current Collector current-peak TC=25ae 3 5 20 Emitter Fig.1 simplified outline (TO-220F) and symbol UNIT V V V A A PC Collector dissipation 2 W Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=5mA; IE=0 IC=50mA; RBE= IC=1.5A ; IB=3mA IC=1.5A ; IB=3mA VCB=80V;IE=0 VEB=5V;IC=0 IC=1.5A ; VCE=3V IC=1.5A ; VCE=5V 1500 MIN 110 100 0.9 2SD1828 SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 1.5 2.0 0.1 3.0 V V mA mA 4000 20 MHz Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 0.8 IC=500IB1=-500IB2=1A VCC=50V ,RL=50| 5.0 Fall time 1.2 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1828 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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